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| IPB60R199CP CoolMOSTM Power Transistor Features * Lowest figure-of-merit R ONxQg * Ultra low gate charge * Extreme dv/dt rated * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.199 33 nC PG-TO263 CoolMOS CP is specially designed for: * Hard switching topologies, for Server and Telecom Type IPB60R199CP Package PG-TO263 Ordering Code SP000223256 Marking 6R199P Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 C T C=25 C I D=6.6 A, V DD=50 V I D=6.6 A, V DD=50 V Value 16 10 51 436 0.66 6.6 50 20 30 139 -55 ... 150 W C A V/ns V mJ Unit A Rev. 2.0 page 1 2006-06-19 IPB60R199CP Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 C Value 9.9 51 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area5) T sold reflow MSL1 0.9 62 K/W - 35 - Soldering temperature, wave- & reflowsolderin allowed - - 260 C Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 A V GS(th) I DSS V DS=V GS, I D=1.1 mA V DS=600 V, V GS=0 V, T j=25 C V DS=600 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=9.9 A, T j=25 C V GS=10 V, I D=9.9 A, T j=150 C Gate resistance Rev. 2.0 RG f =1 MHz, open drain page 2 600 2.5 3 3.5 1 A V - 10 0.18 0.49 2 100 0.199 2006-06-19 nA IPB60R199CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related6) Effective output capacitance, time related7) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) 2) 3) 4) Values typ. max. Unit C iss C oss C o(er) C o(tr) t d(on) tr t d(off) tf V GS=0 V, V DS=100 V, f =1 MHz - 1520 72 69 180 10 5 50 5 - pF V GS=0 V, V DS=0 V to 480 V ns V DD=400 V, V GS=10 V, I D=9.9 A, R G=3.3 - Q gs Q gd Qg V plateau V DD=400 V, I D=9.9 A, V GS=0 to 10 V - 8 11 32 5.0 43 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=9.9 A, T j=25 C - 0.9 340 5.5 33 1.2 - V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD<=ID, di/dt<=200A/s, VDClink=400V, Vpeak Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 6) 7) Rev. 2.0 page 3 2006-06-19 IPB60R199CP 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 150 102 limited by on-state resistance 1 s 10 s 100 s 100 101 P tot [W] I D [A] 1 ms DC 10 ms 50 10 0 0 0 40 80 120 160 10-1 100 101 102 103 T C [C] V DS [V] 3 Max. transient thermal impedance Z thJC =f(t P) parameter: D=t p/T 100 4 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 75 0.5 20 V 60 0.2 7V 10 V 8V Z thJC [K/W] 45 0.1 10 -1 0.05 I D [A] 0.02 30 6V 0.01 5.5 V single pulse 15 5V 4.5 V 10-2 10-5 10-4 10-3 10-2 10-1 100 0 0 5 10 15 20 t p [s] V DS [V] Rev. 2.0 page 4 2006-06-19 IPB60R199CP 5 Typ. output characteristics I D=f(V DS); T j=150 C parameter: V GS 35 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 1.2 6.5 V 6V 20 V 10 V 8V 7V 6V 30 1 5V 5.5 V 10 V 25 5.5 V 0.8 20 R DS(on) [] 7V I D [A] 0.6 15 5V 0.4 10 4.5 V 5 0.2 0 0 5 10 15 20 0 0 10 20 30 40 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=9.9 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.6 80 0.5 60 0.4 C 25 R DS(on) [] 0.3 98 % I D [A] 40 0.2 typ C 150 20 0.1 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T j [C] V GS [V] Rev. 2.0 page 5 2006-06-19 IPB60R199CP 9 Typ. gate charge V GS=f(Q gate); I D=9.9 A pulsed parameter: V DD 10 9 8 7 6 120 V 150 C, 98% 25 C 400 V 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 25 C, 98% 101 150 C V GS [V] 5 4 3 2 1 0 0 10 20 30 40 I F [A] 100 10-1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche energy E AS=f(T j); I D=6.6 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 500 700 400 660 V BR(DSS) [V] 20 60 100 140 180 300 E AS [mJ] 620 200 580 100 0 540 -60 -20 20 60 100 140 180 T j [C] T j [C] Rev. 2.0 page 6 2006-06-19 IPB60R199CP 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 105 12 104 Ciss 8 10 3 102 Coss E oss [J] 4 0 200 300 400 500 0 C [pF] 101 Crss 100 0 100 100 200 300 400 500 600 V DS [V] V DS [V] Rev. 2.0 page 7 2006-06-19 IPB60R199CP Definition of diode switching characteristics Rev. 2.0 page 8 2006-06-19 IPB60R199CP PG-TO263-3-2/TO263-3-5/TO263-3-22: Outlines Dimensions in mm/inches Rev. 2.0 page 9 2006-06-19 IPB60R199CP Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 2006-06-19 |
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